Related references
Note: Only part of the references are listed.Nonvolatile resistive switching memories-characteristics, mechanisms and challenges
Feng PAN et al.
Progress in Natural Science-Materials International (2012)
Observation of conducting filament growth in nanoscale resistive memories
Yuchao Yang et al.
NATURE COMMUNICATIONS (2012)
Anatomy of a Nanoscale Conduction Channel Reveals the Mechanism of a High-Performance Memristor
Feng Miao et al.
ADVANCED MATERIALS (2011)
A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5-x/TaO2-x bilayer structures
Myoung-Jae Lee et al.
NATURE MATERIALS (2011)
Controllable Growth of Nanoscale Conductive Filaments in Solid-Electrolyte-Based ReRAM by Using a Metal Nanocrystal Covered Bottom Electrode
Qi Liu et al.
ACS NANO (2010)
Interface-Engineered Amorphous TiO2-Based Resistive Memory Devices
Hu Young Jeong et al.
ADVANCED FUNCTIONAL MATERIALS (2010)
Three-Dimensional Integration of Organic Resistive Memory Devices
Sunghoon Song et al.
ADVANCED MATERIALS (2010)
Off-state and turn-on characteristics of solid electrolyte switch
Y. Tsuji et al.
APPLIED PHYSICS LETTERS (2010)
Transition of stable rectification to resistive-switching in Ti/TiO2/Pt oxide diode
Jiun-Jia Huang et al.
APPLIED PHYSICS LETTERS (2010)
Bipolar resistive switching in Cu/AlN/Pt nonvolatile memory device
C. Chen et al.
APPLIED PHYSICS LETTERS (2010)
Influence of electrode material on the resistive memory switching property of indium gallium zinc oxide thin films
Min-Chen Chen et al.
APPLIED PHYSICS LETTERS (2010)
Multilevel resistance switching in Cu/TaOx/Pt structures induced by a coupled mechanism
Y. C. Yang et al.
JOURNAL OF APPLIED PHYSICS (2010)
Atomic structure of conducting nanofilaments in TiO2 resistive switching memory
Deok-Hwang Kwon et al.
NATURE NANOTECHNOLOGY (2010)
Modeling for bipolar resistive memory switching in transition-metal oxides
Ji Hyun Hur et al.
PHYSICAL REVIEW B (2010)
Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges
Rainer Waser et al.
ADVANCED MATERIALS (2009)
Programmable Resistance Switching in Nanoscale Two-Terminal Devices
Sung Hyun Jo et al.
NANO LETTERS (2009)
Fully Room-Temperature-Fabricated Nonvolatile Resistive Memory for Ultrafast and High-Density Memory Application
Yu Chao Yang et al.
NANO LETTERS (2009)
High room-temperature photoluminescence of one-dimensional Ta2O5 nanorod arrays
Rupesh S. Devan et al.
NANOTECHNOLOGY (2009)
Occurrence of Both Unipolar Memory and Threshold Resistance Switching in a NiO Film
S. H. Chang et al.
PHYSICAL REVIEW LETTERS (2009)
Random circuit breaker network model for unipolar resistance switching
Seung Chul Chae et al.
ADVANCED MATERIALS (2008)
Overview of candidate device technologies for storage-class memory
G. W. Burr et al.
IBM JOURNAL OF RESEARCH AND DEVELOPMENT (2008)
Memristive switching mechanism for metal/oxide/metal nanodevices
J. Joshua Yang et al.
NATURE NANOTECHNOLOGY (2008)
Materials science - Who wins the nonvolatile memory race?
G. I. Meijer
SCIENCE (2008)
Electronic transport in Ta2O5 resistive switch
Toshitsugu Sakamoto et al.
APPLIED PHYSICS LETTERS (2007)
Temperature dependence of high- and low-resistance bistable states in polycrystalline NiO films
Kyooho Jung et al.
APPLIED PHYSICS LETTERS (2007)