Journal
APPLIED PHYSICS LETTERS
Volume 100, Issue 20, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4719675
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- Natural Sciences and Engineering Research Council of Canada
- MBE growth by Shahram Tavakoli
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The surface passivation of n-type GaAs nanowires (NWs) by ammonium polysulfide solution, (NH4)(2)S-x, is described. The passivation resulted in a two order of magnitude increase in current density in an ensemble NW device. A depletion and recombination model is used to explain the results in terms of a reduction in surface trap density upon passivation. The results are comparable to a previous passivation method using AlInP shells. The S passivation was found to be unstable according to the degradation in the ensemble NW conductivity after a 7 months exposure to air. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4719675]
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