Journal
APPLIED PHYSICS LETTERS
Volume 101, Issue 4, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4740268
Keywords
-
Categories
Funding
- MEXT, Japan [19104008]
- JSPS through the Funding Program for World-Leading Innovative R&D on Science and Technology (FIRST Program)
- Grants-in-Aid for Scientific Research [23656011, 19104008, 24684023] Funding Source: KAKEN
Ask authors/readers for more resources
Electro-static carrier doping was attempted in a layered transition metal disulphide MoS2 by constructing an electric double-layer transistor with an ionic liquid. With the application of gate voltage V-G higher than 3 V, a metallic behavior was observed in the MoS2 channel. We found an onset of electric field-induced superconductivity in the field induced metallic phase. A maximum T-C similar to 9.4K was observed, which could be higher than those in chemically doped bulk materials. (C) 2012 American Institute of Physics. [http://dx.doi. rg/10.1063/1.4740268]
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available
Share Paper
