Journal
APPLIED PHYSICS LETTERS
Volume 101, Issue 8, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4747451
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Funding
- OeAD (Osterreichische Austauschdienst)
- Department of Science and Technology (DST), India
- Austrian Science Foundation [NFN-S9706]
- OeAD Project [IN 10/2011, UA 10/2011]
- Land Oberosterreich, project Organische Nanostrukturen
- European Project POLARIC [FP7-247978]
- STCU in Ukraine [5258]
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The electron mobility was found to increase (decrease) upon applied compressive (tensile) strain, respectively, when a high-performance flexible C-60-based organic field-effect transistor (OFET) was subjected to different bending radii. The observed almost twofold relative change in the electron mobility is considerably larger than that reported before for pentacene-based OFETs. Moreover, the strain dependency of electron mobility in C-60 films is strongly anisotropic with respect to the strain direction measured relative to the current flow. Analysis within a hopping-transport model for OFET mobility suggests that the observed strain dependency on electron transport is dominated mostly by the change of inter-grain coupling in polycrystalline C-60 films. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4747451]
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