4.6 Article

Current-induced motion of a transverse magnetic domain wall in the presence of spin Hall effect

Journal

APPLIED PHYSICS LETTERS
Volume 101, Issue 2, Pages -

Publisher

AMER INST PHYSICS
DOI: 10.1063/1.4733674

Keywords

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Funding

  1. NRF [2010-0014109, 2010-0023798, 2011-0009278, 2011-0028163, 2011-0030790]
  2. MKE/KEIT [2009-F-004-01]
  3. University of Maryland
  4. National Institute of Standards and Technology Center for Nanoscale Science and Technology [70NANB10H193]
  5. National Research Foundation of Korea [2011-0030790, 2010-0014109, 2010-0023798, 2011-0009278, 과C6A2001, 2011-0028163] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

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We theoretically study current-induced dynamics of a transverse magnetic domain wall in bi-layer nanowires consisting of a ferromagnetic layer on top of a nonmagnetic layer with strong spin-orbit coupling. Domain wall dynamics is characterized by two threshold current densities, J(th)(WB) and J(th)(REV), where J(th)(WB) is a threshold for the chirality switching of the domain wall and J(th)(REV) is another threshold for the reversed domain wall motion caused by spin Hall effect. Domain walls with a certain chirality may move opposite to the electron-flow direction with high speed in the current range J(th)(REV) < J < J(th)(WB) for the system designed to satisfy the conditions J(th)(WB) > J(th)(REV) and alpha > beta, where alpha is the Gilbert damping constant and beta is the nonadiabaticity of spin torque. Micromagnetic simulations confirm the validity of analytical results. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4733674]

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