Journal
APPLIED PHYSICS LETTERS
Volume 100, Issue 18, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4711850
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Funding
- National Science Foundation (MRSEC) [0968346]
- Directorate For Engineering [0968346] Funding Source: National Science Foundation
- Div Of Electrical, Commun & Cyber Sys [0968346] Funding Source: National Science Foundation
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We report the direct measurement of spin transport characteristics in a GaN spin valve, with a relatively defect-free single GaN nanowire (NW) as the channel and FeCo/MgO as the tunnel barrier spin contact. Hanle spin precession and non-local transport measurements are made in an unintentionally doped nanowire spin valves. Spin diffusion length and spin lifetime values of 260 nm and 100 ps, respectively, are derived. Appropriate control measurements have been made to verify spin injection, transport, and detection. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4711850]
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