Journal
APPLIED PHYSICS LETTERS
Volume 100, Issue 16, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4704667
Keywords
ballistic transport; electrical resistivity; graphene; p-n junctions; quantum Hall effect; tunnelling
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Funding
- IMEC
- Flemish Science Foundation (FWO-Vl)
- Belgian Science Policy (IAP)
- ESF-EuroGRAPHENE
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The Hall (R-H) and bend (R-B) resistances of a graphene Hall bar structure containing a pn-junction are calculated when in the ballistic regime. The simulations are done using the billiard model. Introducing a pn-junction-dividing the Hall bar geometry in two regions-leads to two distinct regimes exhibiting very different physics: (1) both regions are of n-type and (2) one region is n-type and the other p-type. In regime (1), a Hall plateau-an enhancement of the resistance-appears for R-H. On the other hand, in regime (2), we found a negative R-H, which approaches zero for large B. The bend resistance is highly asymmetric in regime (2) and the resistance increases with increasing magnetic field B in one direction while it reduces to zero in the other direction. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4704667]
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