Journal
APPLIED PHYSICS LETTERS
Volume 101, Issue 25, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4773008
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Funding
- Spanish MICINN [MAT2010-15206]
- MEC [TEC2011-29120-C05-04]
- CAM [P2009/ESP-1503]
- MICINN through the Ramon y Cajal program
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The photoluminescence efficiency of GaAsSb-capped InAs/GaAs type II quantum dots (QDs) can be greatly enhanced by rapid thermal annealing while preserving long radiative lifetimes which are similar to 20 times larger than in standard GaAs-capped InAs/GaAs QDs. Despite the reduced electron-hole wavefunction overlap, the type-II samples are more efficient than the type-I counterparts in terms of luminescence, showing a great potential for device applications. Strain-driven In-Ga intermixing during annealing is found to modify the QD shape and composition, while As-Sb exchange is inhibited, allowing to keep the type-II structure. Sb is only redistributed within the capping layer giving rise to a more homogeneous composition. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4773008]
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