Journal
APPLIED PHYSICS LETTERS
Volume 101, Issue 21, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4767138
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- Engineering and Physical Sciences Research Council [875420] Funding Source: researchfish
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Electroluminescence from strained n-Ge quantum well light emitting diodes grown on a silicon substrate are demonstrated at room temperature. Electroluminescence characterisation demonstrates two peaks around 1.55 mu m and 1.8 mu m, which correspond to recombination between the direct and indirect transitions, respectively. The emission wavelength can be tuned by around 4% through changing the current density through the device. The devices have potential applications in the fields of optical interconnects, gas sensing, and healthcare. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4767138]
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