Journal
APPLIED PHYSICS LETTERS
Volume 100, Issue 19, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4711205
Keywords
-
Categories
Funding
- National Natural Science Foundation of China [91027021]
- National Basic Research Program of China (973 Program) [2012CB932400]
- Chinese Ministry of Education [NCET-08-0764]
- National Natural Science Foundation of China (NSFC) [51172151, 60806028, 21101051, 61106010, 20901021]
Ask authors/readers for more resources
We report the construction of Schottky solar cells based on graphene nanoribbon/multiple silicon nanowires (SiNWs) junctions. Only a few (similar to 10) SiNWs were involved to miniaturize the solar cell for nanoscale power source applications. It was found that doping level of the SiNWs played an important role in determining the device performance. By increasing the doping level, solar cell with open circuit voltage of 0.59V and energy conversion efficiency of 1.47% were achieved under AM 1.5G illumination. The large effective junction area of the radial Schottky junction was responsible for the high device performance. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4711205]
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available