Journal
APPLIED PHYSICS LETTERS
Volume 101, Issue 8, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4747201
Keywords
-
Categories
Funding
- MEXT, Japan [18340104, 20045012]
- Japan Science and Technology Agency (JST), Japan [AS231Z01256D]
- Tohoku Bureau of Economy, Trade and Industry of METI, Japan
- Okayama Prefecture, Japan
- Grants-in-Aid for Scientific Research [23684028, 20045012, 18340104] Funding Source: KAKEN
Ask authors/readers for more resources
Transistor characteristics are studied for field-effect transistors (FETs) with thin films of [6]phenacene, which has six benzene rings and W-shape structure. The molecular alignment preferable for FET transport is found to be formed in [6]phenacene thin films. The transistor shows clear p-channel FET characteristics with field-effect mobility mu as high as 3.7 cm(2) V-1 s(-1). The similar O-2 sensing properties to picene FET are observed in [6]phenacene thin film FET. The bias stress properties are observed in [6]phenacene thin film FET. The pulse-voltage application suppresses the bias-stress effect and it enables a continuous O-2 sensing in [6]phenacene FET. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4747201]
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available