Journal
APPLIED PHYSICS LETTERS
Volume 100, Issue 7, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3684615
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Funding
- Air Force Office of Scientific Research (AFOSR) [FA9550-10-1-0010]
- National Science Foundation (NSF) [0933763]
- Directorate For Engineering
- Div Of Chem, Bioeng, Env, & Transp Sys [0933763] Funding Source: National Science Foundation
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In nanostructured bulk materials, the additional interfaces in the material enhance phonon scattering and reduce the thermal conductivity. However, interfaces also scatter electrons and deteriorate charge carrier transport. In order to benefit from the interfacial effects, the crystallite size in the material must be small compared with phonon mean free path (PMFP) and large compared with the charge carrier mean free path (CMFP). In this paper, we solve the Boltzmann transport equation for charge carriers and phonons. We show that bulk nanostructuring of Mg2Si is not an efficient method to enhance the figure-of-merit as the PMFP and CMFP are in the same range. (C) 2012 American Institute of Physics. [doi:10.1063/1.3684615]
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