Related references
Note: Only part of the references are listed.Increase in photocurrent by optical transitions via intermediate quantum states in direct-doped InAs/GaNAs strain-compensated quantum dot solar cell
Yoshitaka Okada et al.
JOURNAL OF APPLIED PHYSICS (2011)
PHOTOVOLTAICS Towards the intermediate band
Antonio Luque et al.
NATURE PHOTONICS (2011)
Engineering the Electronic Band Structure for Multiband Solar Cells
N. Lopez et al.
PHYSICAL REVIEW LETTERS (2011)
Localized and delocalized states in GaNAs studied by microphotoluminescence and photoreflectance
Robert Kudrawiec et al.
APPLIED PHYSICS LETTERS (2009)
Production of photocurrent due to intermediate-to-conduction-band transitions:: A demonstration of a key operating principle of the intermediate-band solar cell
A. Marti et al.
PHYSICAL REVIEW LETTERS (2006)
On the temperature sensitivity of 1.5-μm GaInNAsSb lasers
SR Bank et al.
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS (2005)
Experimental analysis of the quasi-Fermi level split in quantum dot intermediate-band solar cells -: art. no. 083505
A Luque et al.
APPLIED PHYSICS LETTERS (2005)
Physics and characteristics of high performance 1200 nm InGaAs and 1300-1400 nm InGaAsN quantum well lasers obtained by metal-organic chemical vapour deposition
N Tansu et al.
JOURNAL OF PHYSICS-CONDENSED MATTER (2004)
High-performance 1200-nm InGaAs and 1300-nm InGaAsN quantum-well lasers by metalorganic chemical vapor deposition
N Tansu et al.
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS (2003)
A metallic intermediate band high efficiency solar cell
A Luque et al.
PROGRESS IN PHOTOVOLTAICS (2001)
Interaction of localized electronic states with the conduction band: Band anticrossing in II-VI semiconductor ternaries
W Walukiewicz et al.
PHYSICAL REVIEW LETTERS (2000)