4.6 Article

Two-photon excitation in an intermediate band solar cell structure

Journal

APPLIED PHYSICS LETTERS
Volume 100, Issue 17, Pages -

Publisher

AMER INST PHYSICS
DOI: 10.1063/1.4709405

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Funding

  1. New Energy and Industrial Technology Development Organization (NEDO)
  2. Ministry of Economy, Trade and Industry (METI), Japan
  3. Office of Science, Office of Basic Energy Sciences, Materials Sciences and Engineering Division, of the U.S. DOE [DE-AC02-05CH11231]

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We present evidence for the production of photocurrent due to two-photon excitation in an intermediate band solar cell structure. The structure consists of an n-GaNAs intermediate band layer sandwiched between a p-AlGaAs emitter and an n-AlGaAs barrier layer with suitable doping level to block electron escaping from the intermediate band to the bottom n-GaAs substrate. Multi-band transitions observed in two-photon excitation experiments are explained using photo-modulated reflectance spectrum, and further support for intermediate band solar cell operation of this structure is given by current-voltage measurements. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4709405]

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