Ambipolar operation of hybrid SiC-carbon nanotube based thin film transistors for logic circuits applications

We report on the ambipolar operation of back-gated thin film field-effect transistors based on hybrid n-type-SiC/p-type-single-walled carbon nanotube networks made with a simple drop casting process. High-performances such an on/off ratio of 10(5), on-conductance of 20 mu S, and a subthreshold swing of less than 165 mV/decades were obtained. The devices are air-stable and maintained their ambipolar operation characteristics in ambient atmosphere for more than two months. Finally, these hybrid transistors were utilized to demonstrate advanced logic NOR-gates. This could be a fundamental step toward realizing stable operating nanoelectronic devices. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4739939]