Journal
APPLIED PHYSICS LETTERS
Volume 101, Issue 4, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4739939
Keywords
-
Categories
Funding
- Canada Foundation for Innovation
- Natural Science and Engineering Research Council (NSERC) of Canada
- Fonds Quebecois de la Recherche sur la Nature et les Technologies (FQRNT)
- Canada Research Chairs Program
- NSERC
Ask authors/readers for more resources
We report on the ambipolar operation of back-gated thin film field-effect transistors based on hybrid n-type-SiC/p-type-single-walled carbon nanotube networks made with a simple drop casting process. High-performances such an on/off ratio of 10(5), on-conductance of 20 mu S, and a subthreshold swing of less than 165 mV/decades were obtained. The devices are air-stable and maintained their ambipolar operation characteristics in ambient atmosphere for more than two months. Finally, these hybrid transistors were utilized to demonstrate advanced logic NOR-gates. This could be a fundamental step toward realizing stable operating nanoelectronic devices. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4739939]
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available