Journal
APPLIED PHYSICS LETTERS
Volume 101, Issue 13, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4755878
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Funding
- Development of New Materials and Solution Process for LCD Backplanes
- ISTK [B551179-09-06-00]
- Basic Science Research Program through the National Research Foundation of Korea (NRF)
- Ministry of Education, Science and Technology [2010-0015035]
- Development of printing ink for touch panels and OLED lighting [A2010D-D006]
- Ministry of Knowledge Economy (MKE)
- Daedeok innopolis
- IT RD Program [2008-F-024-02]
- MKE
- IT R&D Infrastructure Program [NIPA-2011-(B1110-1101-0002]
- MKE in Korea
- Korea Evaluation Institute of Industrial Technology (KEIT) [KI001916] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Council of Science & Technology (NST), Republic of Korea [B551179-09-06-00] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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Here, we report on high-performance top-gated poly(3,3'''-dialkyl-quarterthiophene) (PQT-12) organic thin-film transistors (OTFTs) with reverse-offset-printed (ROP) silver (Ag) source/drain (S/D) electrodes. OTFT devices with ROP S/D electrodes using Ag nanopaste show higher performance (similar to 0.01 cm(2)/Vs) than those fabricated by vacuum electron beam evaporation with conventional photolithography and a standard lift-off process (similar to 1 x 10(-3) cm(2)/Vs). This dissimilarity is attributed to the higher work function (-4.9 eV) of the ROP Ag electrode due to AgO formation on the Ag surface during thermal annealing. This results in a low interfacial hole injection energy barrier between the S/D electrodes and the PQT-12 semiconductor. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4755878]
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