Related references
Note: Only part of the references are listed.Semiconductor nanowires for highly sensitive, room-temperature detection of terahertz quantum cascade laser emission
Miriam S. Vitiello et al.
APPLIED PHYSICS LETTERS (2012)
Contacts shielding in nanowire field effect transistors
Alessandro Pitanti et al.
JOURNAL OF APPLIED PHYSICS (2012)
Room-Temperature Terahertz Detectors Based on Semiconductor Nanowire Field-Effect Transistors
Miriam S. Vitiello et al.
NANO LETTERS (2012)
Terahertz responsivity of field effect transistors versus their static channel conductivity and loading effects
M. Sakowicz et al.
JOURNAL OF APPLIED PHYSICS (2011)
Manipulation of Electron Orbitals in Hard-Wall InAs/InP Nanowire Quantum Dots
Stefano Roddaro et al.
NANO LETTERS (2011)
InAs/InP/InSb Nanowires as Low Capacitance n-n Heterojunction Diodes
A. Pitanti et al.
PHYSICAL REVIEW X (2011)
Temperature dependent properties of InSb and InAs nanowire field-effect transistors
Henrik A. Nilsson et al.
APPLIED PHYSICS LETTERS (2010)
Field Effect Transistors for Terahertz Detection: Physics and First Imaging Applications
Wojciech Knap et al.
JOURNAL OF INFRARED MILLIMETER AND TERAHERTZ WAVES (2009)
Diameter-Dependent Electron Mobility of InAs Nanowires
Alexandra C. Ford et al.
NANO LETTERS (2009)
InAs/InSb nanowire heterostructures grown by chemical beam epitaxy
Daniele Ercolani et al.
NANOTECHNOLOGY (2009)
High-quality InAs/InSb nanowire heterostructures grown by metal-organic vapor-phase epitaxy
Philippe Caroff et al.
SMALL (2008)
Sulfur passivation for ohmic contact formation to InAs nanowires
D. B. Suyatin et al.
NANOTECHNOLOGY (2007)
High electron mobility InAs nanowire field-effect transistors
Shadi A. Dayeh et al.
SMALL (2007)
Band parameters for III-V compound semiconductors and their alloys
I Vurgaftman et al.
JOURNAL OF APPLIED PHYSICS (2001)
Share Paper
