Journal
APPLIED PHYSICS LETTERS
Volume 101, Issue 14, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4757005
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Funding
- Regione Toscana through the POR project Focus on competence
- Marie Curie Actions under REA Grant [298861]
- GDR-I THz
- Region of Languedoc-Roussillon Terahertz Platform
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Heterostructured InAs/InSb nanowire (Nw) based field effect transistors (FET) have been fabricated and tested as Terahetz radiation detectors. While responsivity and noise equivalent power compare with the ones of InAs nanowire detectors, the presence of small-gap InSb semiconductor gives rise to interesting physical effects such an increase of the detected signal with charge injection through the wire, at odds with standard FET-detectors. Additionally, the photodetected signal voltage changes its sign after a threshold gate bias, which we explain considering surface-related transport and field asymmetries imposed by the use of a lateral gate electrode. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4757005]
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