p-channel, n-channel thin film transistors and p-n diodes based on single wall carbon nanotube networks

This paper demonstrates the use of arrays of networks of single wall carbon nanotubes (SWNTs) and electrical breakdown procedures for building thin film transistors (TFTs) that have good, reproducible performance and high current output. Channel length scaling analysis of these TFTs indicates that the resistance at the source/drain contacts is a small fraction of the device resistance, in the linear regime. When measured with the channel exposed to air or coated by poly(methyl methacrylate) (PMMA), these transistors operate in the unipolar p mode. By spin-coating the polymer polyethylenimine (PEI) on the channel region, these transistors can be switched to operate in the unipolar n mode. Patterning the exposure of a single channel to PMMA and PEI yields p-n diodes. These results indicate that SWNT-TFTs can provide the building blocks of complex complementary circuits for a range of applications in macroelectronics, sensors, and other systems.