4.6 Article

Nonmagnetic spin-field-effect transistor

Journal

APPLIED PHYSICS LETTERS
Volume 101, Issue 8, Pages -

Publisher

AMER INST PHYSICS
DOI: 10.1063/1.4747494

Keywords

-

Funding

  1. Research Grants Council of Hong Kong SAR, China [CityU 100311/11P]
  2. City University of Hong Kong [9610180]

Ask authors/readers for more resources

We propose a spin-field-effect transistor based on a semiconductor quantum wire with spin-orbit coupling and normal electrical contacts, instead of the ferromagnetic contacts required in the Datta and Das spin-field-effect transistor. The spin of electrons can be completely polarized and detected by manipulating and detecting the orbital wave-function using the spin-orbit coupling. The central spin-orbit coupled region consists of two segments with different strengths of Rashba spin-orbit coupling alpha(1) and alpha(2), respectively. The conductance is nearly 1 for the case of alpha(2) = alpha(1) and 0 for alpha(2) = -alpha(1) in a wide energy range. The device can work as a nonmagnetic spin transistor, which can have important applications in spintronics. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4747494]

Authors

I am an author on this paper
Click your name to claim this paper and add it to your profile.

Reviews

Primary Rating

4.6
Not enough ratings

Secondary Ratings

Novelty
-
Significance
-
Scientific rigor
-
Rate this paper

Recommended

No Data Available
No Data Available