Journal
APPLIED PHYSICS LETTERS
Volume 100, Issue 7, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3687176
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- Office of Science, Office of Basic Energy Sciences, of the U.S. Department of Energy [DE-AC02-05CH11231]
- International Synchrotron Access Program (ISAP)
- Australian Government
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The electronic structure of thin film HoN has been studied using soft x-ray spectroscopy. The combination of soft x-ray emission, x-ray absorption, and photoemission techniques yields direct evidence for hybridization between the N 2p and the Ho 4f states, previously unseen in this or related rare earth nitride systems. The N 2p states extend up to 10 eV below the Fermi level to nearly twice the binding energy as previously believed. Optical spectroscopy yields a minimum direct gap of 1.48 eV. In light of these results, we identify HoN as a prime candidate for spin-diffusion and spintronics applications. (C) 2012 American Institute of Physics. [doi:10.1063/1.3687176]
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