Vertical minority carrier electron transport in p-type InAs/GaSb type-II superlattices

Vertical minority carrier electron transport parameters in p-type InAs/GaSb type-II superlattices for long wavelength infrared (LWIR) detection have been extracted from magnetic field dependent geometrical magneto-resistance. The measurements, performed at low electric fields and at magnetic field intensities up to 12 T, exhibited multiple-carrier conduction characteristics that required mobility spectrum analysis for the extraction of individual carrier mobilities and concentrations. Within the common operating temperature range for LWIR photodiodes (80 to 150K), the conductivity was found to be dominated by three distinct carriers, attributed to majority holes (mu = 280+/-27 cm(2)/Vs), minority electrons (mu = 2; 460+/-75 cm(2)/Vs), and parasitic sidewall inversion layer electrons (mu = 930+/-55 cm(2)/Vs). A miniband energy gap of 140+/-15 meV for the 14/7-monolayer InAs/GaSb superlattice was estimated from the thermal activation of the minority carrier electron density. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4772954]