Related references
Note: Only part of the references are listed.Identification of substitutional Li in n-type ZnO and its role as an acceptor
K. M. Johansen et al.
PHYSICAL REVIEW B (2011)
Energetics of intrinsic defects and their complexes in ZnO investigated by density functional calculations
R. Vidya et al.
PHYSICAL REVIEW B (2011)
Point defects in ZnO: an approach from first principles
Fumiyasu Oba et al.
SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS (2011)
Nanoscale depth-resolved electronic properties of SiO2/SiOx/SiO2 for device-tolerant electronics
E. J. Katz et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2011)
Dual nature of acceptors in GaN and ZnO: The curious case of the shallow MgGa deep state
Stephan Lany et al.
APPLIED PHYSICS LETTERS (2010)
Lithium and electrical properties of ZnO
L. Vines et al.
JOURNAL OF APPLIED PHYSICS (2010)
Vacancy defect and defect cluster energetics in ion-implanted ZnO
Yufeng Dong et al.
PHYSICAL REVIEW B (2010)
Zinc oxide: bulk growth, role of hydrogen and Schottky diodes
E. V. Monakhov et al.
JOURNAL OF PHYSICS D-APPLIED PHYSICS (2009)
A hybrid density functional study of lithium in ZnO: Stability, ionization levels, and diffusion
A. Carvalho et al.
PHYSICAL REVIEW B (2009)
Native point defects in ZnO
Anderson Janotti et al.
PHYSICAL REVIEW B (2007)
Nature of native defects in ZnO
F. A. Selim et al.
PHYSICAL REVIEW LETTERS (2007)
On the role of group I elements in ZnO
B. K. Meyer et al.
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING (2007)
Hydrogen multicentre bonds
Anderson Janotti et al.
NATURE MATERIALS (2007)
Deactivation of Li by vacancy clusters in ion-implanted and flash-annealed ZnO
T. Moe Borseth et al.
PHYSICAL REVIEW B (2006)
Dopant source choice for formation of p-type ZnO:: Li acceptor
YJ Zeng et al.
APPLIED PHYSICS LETTERS (2006)
Lithium and sodium acceptors in ZnO
BK Meyer et al.
SUPERLATTICES AND MICROSTRUCTURES (2005)
Theory of Li in ZnO:: A limitation for Li-based p-type doping -: art. no. 155205
MG Wardle et al.
PHYSICAL REVIEW B (2005)
Recent progress in processing and properties of ZnO
SJ Pearton et al.
PROGRESS IN MATERIALS SCIENCE (2005)
Possible p-type doping with group-I elements in ZnO -: art. no. 115210
EC Lee et al.
PHYSICAL REVIEW B (2004)
Nanoscale luminescence spectroscopy of defects at buried interfaces and ultrathin films
LJ Brillson
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2001)
Recent advances in ZnO materials and devices
DC Look
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY (2001)
Intrinsic n-type versus p-type doping asymmetry and the defect physics of ZnO -: art. no. 075205
SB Zhang et al.
PHYSICAL REVIEW B (2001)