Journal
APPLIED PHYSICS LETTERS
Volume 100, Issue 6, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3684625
Keywords
-
Categories
Funding
- ST Microelectronics RD in Catania
- LAST POWER (ENIAC) [120218]
- PRIN [20097X44S7_002]
Ask authors/readers for more resources
This letter reports on epitaxial nickel oxide (NiO) films grown by metal-organic chemichal vapor deposition on AlGaN/GaN heterostructures. The grown material was epitaxial, free from voids and exhibited a permittivity of 11.7, close to bulk NiO. This approach is advantageous with respect other methods such as the thermal oxidation of Ni films due to a better reproducibility and film quality. A reduction of the leakage current in Schottky diodes with an interfacial NiO layer has been observed and described using the metal-insulator-semiconductor Schottky model. The results indicate that these films are promising as gate dielectric for AlGaN/GaN transistors technology. (C)2012 American Institute of Physics. [doi:10.1063/1.3684625]
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available