Journal
APPLIED PHYSICS LETTERS
Volume 85, Issue 14, Pages 2815-2817Publisher
AMER INST PHYSICS
DOI: 10.1063/1.1802381
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We have studied the effect of hydrogen annealing on the surface roughness of germanium (Ge) layers grown by chemical vapor deposition on silicon using atomic force microscopy and cross-sectional high resolution scanning electron microscopy (HR-SEM). Our results indicate a strong reduction of roughness that approaches 90% at 825 degreesC. The smoother Ge surface allowed for the fabrication of metal-oxide-semiconductor capacitors using germanium oxynitride (GeOxNy) as the gate dielectric. Electrical quality was studied using high frequency capacitance-voltage characteristic of epi-Ge showing negligible hysteresis. We discuss the results in terms of Ge-H cluster formation, which lowers the diffusion barrier, allowing for higher diffusivity and surface mobility. The temperature dependence shows tapering off for temperatures exceeding 800 degreesC, indicating a barrier reduction of similar to92 meV. (C) 2004 American Institute of Physics.
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