Journal
APPLIED PHYSICS LETTERS
Volume 85, Issue 14, Pages 2860-2862Publisher
AMER INST PHYSICS
DOI: 10.1063/1.1799245
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We examine the intrinsic mechanism of ferromagnetism in dilute magnetic semiconductors by analyzing the trends in the electronic structure as the host is changed from GaN to GaSb, keeping the transition metal impurity fixed. In contrast with earlier interpretations which depended on the host semiconductor, it is found that a single mechanism is sufficient to explain the ferromagnetic stabilization energy for the entire series. (C) 2004 American Institute of Physics.
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