Pt/ZnO nanowire Schottky diodes

Pt Schottky diodes were formed on single ZnO nanowires grown by site-selective molecular-beam epitaxy and then transferred to SiO2-coated Si substrates. The diodes exhibit excellent ideality factors of 1.1 at 25 degreesC and very low (1.5 X 10(-10) A, equivalent to 2.35 A cm(-2), at -10 V) reverse currents. The nanowire diodes show a strong photoresponse, with the current-voltage characteristics becoming ohmic under ultraviolet illumination (366 nm light). The on-off current ratio of the diodes at 0.15/-5 V was similar to6. These results show the ability to manipulate the electron transport in nanoscale ZnO devices. (C) 2004 American Institute of Physics.