Metal-induced solid-phase crystallization of amorphous TiO2 thin films

Metal-induced solid-phase crystallization of amorphous TiO2 thin films was investigated by introducing metal contact layers such as Ni or Cu between the TiO2 film and substrate. The crystallization temperature of TiO2 was found to be lowered by 30 degrees C (from similar to 250 to similar to 220 degrees C) with the use of a Ni contact layer. Based on the fact that part of the Ni atoms diffused to the surface of the crystallized TiO2 film, we proposed a reaction-assisted crystallization model in which an intermediate complex containing Ti-O and Ni-O bonds decomposes to crystallize TiO2 at a relatively low temperature. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4739934]