Journal
APPLIED PHYSICS LETTERS
Volume 100, Issue 4, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3680249
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We report on the enhanced carrier injection in pentacene thin-film transistors with a thin MoO3-doped pentacene layer between pentacene semiconductor and the source-drain electrodes. Device performance including drain current, field effect mobility, and threshed voltage are improved by employing a MoO3-doped pentacene thin layer. The barrier height at the Au/pentacene interface is lowered from 0.12 to 0.05 eV after inserting a MoO3-doped pentacene thin layer between them. The reduced barrier height is attributed to the formation of a good contact between MoO3-doped pentacene and Au owing to smoothed surface morphology of pentancene and suitable band bending by MoO3 doping. (C) 2012 American Institute of Physics. [doi:10.1063/1.3680249]
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