A dual-silicon-nanowires based U-shape nanoelectromechanical switch with low pull-in voltage

A dual-silicon-nanowires based U-shape nanoelectromechanical switch with low pull-in voltage is fabricated using standard complementary metal-oxide-semiconductor compatible process on silicon-on-insulator wafer. The switch consists of a capacitive paddle with dimension of 2 mu m by 4 mu m supported by two silicon nanowires, suspended on top of the substrate with a gap of 145 nm. The nanowires are 5 mu m long with cross-section of 90 nm by 90 nm. The average pull-in voltage is about 1.12 V and the ratio of the ON/OFF current is measured to be over 10000. According to the preliminary results, this U-shape structure demonstrates great potential in lowering down the pull-in voltage. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3693382]