Journal
APPLIED PHYSICS LETTERS
Volume 101, Issue 21, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4767679
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Funding
- National Security Technologies through NSF Industry/University Cooperative Research Center Connection One
- NSF [DMR 1151028]
- China Scholarship Council (CSC) [2010646040]
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A heterojunction photodiode was fabricated from ZnO nanowires (NWs) grown on a p-type Si (100) substrate using a hydrothermal method. Post growth hydrogen treatment was used to improve the conductivity of the ZnO NWs. The heterojunction photodiode showed diode characteristics with low reverse saturation current (5.58 x 10(-7) A), relatively fast transient response, and high responsivity (22 A/W at 363 nm). Experiments show that the photoresponsivity of the photodiode is dependent on the polarity of the voltages. The photoresponsivity of the device was discussed in terms of the band diagrams of the heterojunction and the carrier diffusion process. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4767679]
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