Journal
APPLIED SURFACE SCIENCE
Volume 237, Issue 1-4, Pages 176-180Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.apsusc.2004.06.092
Keywords
silicon carbide; two-dimensional layer; ion-beam deposition; near-edge X-ray absorption fine structure; polarization dependence; X-ray photoelectron spectroscopy
Ask authors/readers for more resources
The electronic and geometrical structures of silicon carbide thin films are presented. The films were deposited on graphite by ion-beam deposition using tetramethylsilane (TMS) as an ion source. In the Si K-edge near-edge X-ray absorption fine structure (NEXAFS) spectra for sub-monolayered film, sharp peaks due to the resonance from Si 1s to pi(*)-like orbitals were observed, suggesting the existence of Si=C double bonds. On the basis of the polarization dependencies of the Si 1s --> pi(*) peak intensities, it is elucidated that the direction of the pi(*)-like orbitals is just perpendicular to the surface. We conclude that the sub-monolayered SiC. film has a flat-lying hexagonal structure of which configuration is analogous to the single sheet of graphite. (C) 2004 Elsevier B.V. All rights reserved.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available