Journal
APPLIED PHYSICS LETTERS
Volume 101, Issue 2, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4733388
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Funding
- University of Maryland NSF-MRSEC
- MRSEC [DMR 05-20741]
- NSF [DMR 11-05224]
- Office of Naval Research
- Maryland NanoCenter
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [1105224] Funding Source: National Science Foundation
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A scheme is proposed to electrically measure the spin-momentum coupling in the topological insulator surface state by injection of spin polarized electrons from silicon. As an initial approach, devices were fabricated consisting of thin (<100 nm) exfoliated crystals of Bi2Se3 on n-type silicon with independent electrical contacts to silicon and Bi2Se3. Analysis of the temperature dependence of thermionic emission in reverse bias indicates a barrier height of 0.34 eV at the Si-Bi2Se3 interface. This robust Schottky barrier opens the possibility of original device designs based on sub-band gap internal photoemission from Bi2Se3 into Si. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4733388]
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