Towards spin injection from silicon into topological insulators: Schottky barrier between Si and Bi2Se3

A scheme is proposed to electrically measure the spin-momentum coupling in the topological insulator surface state by injection of spin polarized electrons from silicon. As an initial approach, devices were fabricated consisting of thin (<100 nm) exfoliated crystals of Bi2Se3 on n-type silicon with independent electrical contacts to silicon and Bi2Se3. Analysis of the temperature dependence of thermionic emission in reverse bias indicates a barrier height of 0.34 eV at the Si-Bi2Se3 interface. This robust Schottky barrier opens the possibility of original device designs based on sub-band gap internal photoemission from Bi2Se3 into Si. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4733388]