Journal
APPLIED PHYSICS LETTERS
Volume 101, Issue 21, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4767657
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Funding
- Lithuanian Research Council [MIP-054/2012]
- Engineering Research Centers Program (ERC) of the National Science Foundation under NSF [EEC-0812056]
- I/UCRC CONNECTION ONE [11347230]
- New York State under NYSTAR [C090145]
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The emission efficiency droop and internal quantum efficiency (IQE) in AlGaN epilayers and heterostructures were investigated by studying photoluminescence intensity dependence on excitation power density at different temperatures in the range from 8 to 300K in three AlGaN samples with similar Al content (33%-35%) and different strength of carrier localization: an epilayer and multiple quantum wells with well widths of 5.0 and 2.5 nm. It is shown that the phenomena leading to the efficiency droop strongly influence the photoluminescence intensity dependence on temperature and, therefore, affect the estimation of IQE based on this dependence. A procedure to optimize the determination of IQE is proposed. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4767657]
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