Three-dimensional mapping of the strain anisotropy in self-assembled quantum-wires by grazing incidence x-ray diffraction

Three-dimensional strain mapping of InAs self-assembled nanowires on an InP substrate using grazing incidence x-ray diffraction is reported. A remarkable anisotropy was observed for the strain components, parallel [-220] and perpendicular [220] to the wire axis. The highest strain relaxation was measured along the [220] direction. The relationship between the interatomic distances along the [-220] and [220] directions, for each z position (height) in the nanostructure, was obtained by angular scans in the vicinity of the (040) reciprocal lattice point. (C) 2004 American Institute of Physics.