Journal
APPLIED PHYSICS LETTERS
Volume 101, Issue 25, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4773034
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Funding
- Northrop Grumman through the ONR Chip Scale Channelizer Program
- AFSOR MURI program [FA9550-12-1-0038]
- Elings fellowship
- MRSEC Program of NSF [DMR 1121053]
- NSF
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We report on the dielectric properties of BaxSr1-xTiO3 (BST) films grown by molecular beam epitaxy on epitaxial Pt bottom electrodes. Paraelectric films (x <= 0.5) exhibit dielectric losses that are similar to those of BST single crystals and ceramics. Films with device quality factors greater than 1000 and electric field tunabilities exceeding 1: 5 are demonstrated. The results provide evidence for the importance of stoichiometry control and the use of a non-energetic deposition technique for achieving high figures of merit of tunable devices with BST thin films. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4773034]
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