Journal
APPLIED PHYSICS LETTERS
Volume 85, Issue 16, Pages 3587-3589Publisher
AMER INST PHYSICS
DOI: 10.1063/1.1808507
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We report the realization of a completely controllable high-speed nanomechanical memory element fabricated from single-crystal silicon wafers. This element consists of a doubly clamped suspended nanomechanical beam structure, which can be made to switch controllably between two stable and distinct states at a single frequency in the megahertz range. Because of their submicron size and high normal-mode frequencies, these nanomechanical memory elements offer the potential to rival the current state-of-the-art electronic data storage and processing. (C) 2004 American Institute of Physics.
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