Journal
CHEMISTRY OF MATERIALS
Volume 16, Issue 21, Pages 3980-+Publisher
AMER CHEMICAL SOC
DOI: 10.1021/cm049055g
Keywords
-
Ask authors/readers for more resources
Flatband potential of nitrogen-doped TiO2 thin film was a little more positive (0.15 V, anodic shift) than that of TiO2 thin film, due to an increase in oxygen vacancy accompanied by nitrogen doping.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available
Share Paper
