Journal
CHEMISTRY OF MATERIALS
Volume 16, Issue 21, Pages 3980-+Publisher
AMER CHEMICAL SOC
DOI: 10.1021/cm049055g
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Flatband potential of nitrogen-doped TiO2 thin film was a little more positive (0.15 V, anodic shift) than that of TiO2 thin film, due to an increase in oxygen vacancy accompanied by nitrogen doping.
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