Journal
APPLIED PHYSICS LETTERS
Volume 101, Issue 19, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4765351
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Funding
- Army Research Office [W911NF-09-C-0097]
- National Science Foundation [MRSEC DMR-0820521, MRI DMR-0922937, DMR-0907475, EPS-1004094]
- Department of Commerce-NIST [70NANB11H165]
- University of Nebraska-Lincoln
- J.A. Woollam Foundation
- Swedish Research Council (VR) [2010-3848]
- Swedish Governmental Agency for Innovation Systems (VINNOVA) [2011-03486]
- Swedish Foundation for Strategic Research
- FCT Portugal [PTDC/FIS/100448/2008, SFRH/BPD/66818/2009]
- Fundação para a Ciência e a Tecnologia [SFRH/BPD/66818/2009] Funding Source: FCT
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [0907475] Funding Source: National Science Foundation
- EPSCoR [1004094] Funding Source: National Science Foundation
- Office Of The Director [1004094] Funding Source: National Science Foundation
- Vinnova [2011-03486] Funding Source: Vinnova
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The temperature-dependence of free-charge carrier mobility, sheet density, and effective mass of a two-dimensional electron gas in a AlGaN/GaN heterostructure deposited on SiC substrate is determined using the THz optical Hall effect in the spectral range from 0.22 to 0.32 THz for temperatures from 1.5 to 300 K. The THz optical Hall-effect measurements are combined with room temperature mid-infrared spectroscopic ellipsometry measurements to determine the layer thickness, phonon mode, and free-charge carrier parameters of the heterostructure constituents. An increase of the electron effective mass from (0.22 +/- 0.01)m(0) at 1.5 K to (0.36 +/- 0.03)m(0) at 300 K is observed, which is indicative for a reduction in spatial confinement of the two-dimensional electron gas at room temperature. The temperature-dependence of the mobility and the sheet density is in good agreement with electrical measurements reported in the literature. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4765351]
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