Journal
APPLIED PHYSICS LETTERS
Volume 101, Issue 14, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4757423
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Funding
- NSF [DMR 1121053]
- RFBR [12-08-00397]
- DARPA CMUVT program
- Solid State Lighting and Energy Center (SSLEC) at UCSB
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In this Letter, we report on the growth and properties of relaxed, compositionally graded AlxGa1-xN buffer layers on freestanding semipolar (20 (2) over bar1) GaN substrates. Continuous and step compositional grades with Al concentrations up to x = 0.61 have been achieved, with emission wavelengths in the mid-ultraviolet region as low as 265 nm. Coherency stresses were relaxed progressively throughout the grades by misfit dislocation generation via primary (basal) slip and secondary (non-basal) slip systems. Threading dislocation densities in the final layers of the grades were less than 10(6)/cm(2) as confirmed by plan-view transmission electron microscopy and cathodoluminescence studies. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4757423]
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