Tin oxide transparent thin-film transistors

A SnO2 transparent thin-film transistor (TTFT) is demonstrated. The SnO2 channel layer is deposited by RF magnetron sputtering and then rapid thermal annealed in O-2 at 600 degreesC. The TTFT is highly transparent, and enhancement-mode behaviour is achieved by employing a very thin channel layer (10-20 nm). Maximum field-effect mobilities of 0.8 cm(2) V-1 s(-1) and 2.0 cm(2) V-1 s(-1) are obtained for enhancement- and depletion-mode devices, respectively. The transparent nature and the large drain current on-to-off ratio of 10(5) associated with the enhancement-mode behaviour of these devices may prove useful for novel gas-sensor applications.