Journal
APPLIED PHYSICS LETTERS
Volume 101, Issue 7, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4745778
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Funding
- Global COE program of Core Research and Engineering of Advanced Materials Interdisciplinary Education Center for Materials Research
- MEXT, Japan
- Grants-in-Aid for Scientific Research [22360008, 23656017] Funding Source: KAKEN
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We report a significant lowering of the Schottky barrier height (SBH) in nickel (Ni)/rubrene devices by the insertion of a tetrafluoro-tetracyanoquinodimethane (F(4)TCNQ), molybdenum trioxide (MoO3), or tetracyanoquinodimethane (TCNQ) layers at the device junction. Devices with F(4)TCNQ and MoO3 layers show ohmic-like characteristics, whereas the device with the TCNQ layer shows a low SBH (0.26 eV). The SBH of Ni/rubrene device without the acceptor layers is 0.56 eV. We explain the SBH lowering by the electron accepting properties of the thin layers. Such layers can be used to fabricate molecular spintronics devices with ohmic contacts for effective electrical spin injection. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4745778]
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