Dielectric behavior of PbZr0.52Ti0.48O3 thin films:: Intrinsic and extrinsic dielectric responses

The dc electric-field (E) dependence of the dielectric constant (epsilon) in PbZr0.52Ti0.48O3 (PZT) thin films has been studied at cryogenic temperatures in the dc electric-field range of 0-820 kV/cm. Significant suppression of epsilon is observed by an application of E up to 400 kV/cm. The relation of epsilon versus E can be well described by the multi-polarization mechanism model, i.e., epsilon(E)=epsilon(0)/[1+alpha epsilon(0)E-3(2)](1/3)+(P(j)x(j)/epsilon(0)) [cosh(Ex(j))](-2). By this equation, the field dependence of the extrinsic dielectric response can be subtracted from the whole dielectric response. The results indicate that the analysis of the relation of epsilon versus E could be a way to separate the intrinsic and extrinsic contributions in PZT. (C) 2004 American Institute of Physics.