Related references
Note: Only part of the references are listed.Continuous-Wave Operation of Pure Blue AlGaN-Cladding-Free Nonpolar InGaN/GaN Laser Diodes
Kathryn M. Kelchner et al.
APPLIED PHYSICS EXPRESS (2010)
Origin of pyramidal hillocks on GaN thin films grown on free-standing m-plane GaN substrates
R. M. Farrell et al.
APPLIED PHYSICS LETTERS (2010)
Carbon impurities and the yellow luminescence in GaN
J. L. Lyons et al.
APPLIED PHYSICS LETTERS (2010)
Electrical properties and deep traps spectra in undoped M-plane GaN films prepared by standard MOCVD and by selective lateral overgrowth
A. Y. Polyakov et al.
JOURNAL OF CRYSTAL GROWTH (2009)
Crystallographic orientation dependence of dopant and impurity incorporation in GaN films grown by metalorganic chemical vapor deposition
Samantha C. Cruz et al.
JOURNAL OF CRYSTAL GROWTH (2009)
Formation and reduction of pyramidal hillocks on m-plane {1100} GaN
A. Hirai et al.
APPLIED PHYSICS LETTERS (2007)
High power and high external efficiency m-plane InGaN light emitting diodes
Mathew C. Schmidt et al.
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS (2007)
Effect of threading dislocation density on Ni/n-GaN Schottky diode I-V characteristics
A. R. Arehart et al.
JOURNAL OF APPLIED PHYSICS (2006)
Impact of deep levels on the electrical conductivity and luminescence of gallium nitride codoped with carbon and silicon
A Armstrong et al.
JOURNAL OF APPLIED PHYSICS (2005)
Impact of carbon on trap states in n-type GaN grown by metalorganic chemical vapor deposition
A Armstrong et al.
APPLIED PHYSICS LETTERS (2004)
Photoionization cross-section analysis for a deep trap contributing to current collapse in GaN field-effect transistors
R Pässler
JOURNAL OF APPLIED PHYSICS (2004)
Optically and thermally detected deep levels in n-type Schottky and p+-n GaN diodes
A Hierro et al.
APPLIED PHYSICS LETTERS (2000)
Share Paper
