Journal
APPLIED PHYSICS LETTERS
Volume 100, Issue 16, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3703766
Keywords
chemical vapour deposition; electronic structure; graphene; interface states; interface structure; organic semiconductors; semiconductor growth; semiconductor thin films; surface ionisation; X-ray photoelectron spectra
Categories
Funding
- Research Grants Council of Hong Kong SAR, China-CRF [CityU5/CRF/08]
- Research Grants Council of Hong Kong SAR, China-GRF [CityU102010]
Ask authors/readers for more resources
The interfacial electronic structures of copper phthalocyanine (CuPc) deposited on a single-layer graphene (SLG) film prepared on Cu and SiO2 substrates (SLG/Cu and SLG/SiO2) were investigated using ultraviolet photoelectron spectroscopy. The ionization energy of CuPc on SLG/Cu and SLG/SiO2 substrate is, respectively, 5.62 eV and 4.97 eV. The energy level alignments at the two interfaces were estimated. The results revealed that the height of the electron (hole) injection barriers are 1.20 (1.10) and 1.38 (0.92) eV at CuPc/SLG/Cu and CuPc/SLG/SiO2 interfaces, respectively. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3703766]
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available
Share Paper
