Journal
APPLIED PHYSICS LETTERS
Volume 100, Issue 19, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4711776
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- NRI-SWAN center
- COSAR
- MKE (Korea)
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We demonstrate the characteristics of dual gated graphene field effect transistors using a thin layer (similar to 7 nm) of parylene-C as a top-gate dielectric. Our devices exhibit good dielectric properties with minimal doping, low leakage current (similar to 10(-6) A/cm(2) at +/- 2 V), and a dielectric constant of similar to 2.1. Additionally, Raman spectroscopy did not reveal any process induced defects after dielectric deposition. Electrical characterization performed in air showed a carrier mobility of similar to 5050 cm(2)/Vs with hysteresis less than 30 mV during top gate operation (-2.5V to 2.5 V) which indicates that parylene and its interface with graphene does not have a significant amount of trapped charges. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4711776]
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