Journal
APPLIED PHYSICS LETTERS
Volume 100, Issue 22, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4724108
Keywords
-
Categories
Funding
- Deutsche Forschungsgemeinschaft [SFB 917]
- NRW-EU Ziel
- HASYLAB
Ask authors/readers for more resources
We investigated the influence of Ti top electrodes on the resistive switching properties of SrTiO3 thin film devices. Above a Ti layer thickness of 5 nm, the initial resistance is strongly reduced, giving rise to forming-free devices. Hard x-ray photoemission experiments reveal the Ti layer to be composed of several oxide phases, induced by the redox-reaction at the Ti/SrTiO3 interface. Grazing incidence small angle x-ray scattering measurements indicate that the reduction of the SrTiO3 thin film occurs in a filamentary way. We attribute this behavior to the preferential reduction of SrTiO3 thin films along highly defective areas. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4724108]
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available