4.6 Article

Evolution of variable range hopping in strongly localized two dimensional electron gas at NdAlO3/SrTiO3 (100) heterointerfaces

Journal

APPLIED PHYSICS LETTERS
Volume 101, Issue 23, Pages -

Publisher

AMER INST PHYSICS
DOI: 10.1063/1.4768932

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Funding

  1. National Research Foundation (NRF) Singapore under the Competitive Research Program (CRP) Tailoring Oxide Electronics by Atomic Control [NRF2008NRF-CRP002-024]
  2. National University of Singapore (NUS) cross-faculty grant
  3. FRC (ARF) [R-144-000-278-112]

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We report evolution of the two-dimensional electron gas behavior at the NdAlO3/SrTiO3 heterointerfaces with varying thicknesses of the NdAlO3 overlayer. The samples with a thicker NdAlO3 show strong localizations at low temperatures and the degree of localization is found to increase with the NdAlO3 thickness. The T-1/3 temperature dependence of the sheet resistance at low temperatures and the magnetoresistance study reveal that the conduction is governed by a two-dimensional variable range hopping mechanism in this strong localized regime. We attribute this thickness dependence of the transport properties of the NdAlO3/SrTiO3 interfaces to the interface strain induced by the overlayers. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4768932]

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