Journal
APPLIED PHYSICS LETTERS
Volume 100, Issue 24, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4729589
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Funding
- Russian Academy of Sciences [24.18]
- Siberian Branch of Russian Academy of Sciences [5.12]
- National Science Council, Taiwan [NSC-100-2923-E-009-001-MY3]
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Model of evenly distributed traps in bulk dielectric is proposed for the resistive memory switching mechanism. Switching from high resistance to the low resistance state is explained by several-fold increase in trap concentration after the application of switching voltage. Both high and low resistance conductivities are governed by multi-phonon ionization and tunneling between neighboring traps. Thermal trap energy for oxygen vacancy and electron effective mass for crystal alpha-GeO2 were calculated using density functional theory and used for the fitting of our charge transport model of resistive memory. The model was verified on the TaN-GeO2-Ni structure with good semi-quantitative agreement with experiment. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4729589]
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