Spin torque switching of perpendicular Ta|CoFeB|MgO-based magnetic tunnel junctions

Spin torque switching is investigated in perpendicular magnetic tunnel junctions using Ta vertical bar CoFeB vertical bar MgO free layers and a synthetic antiferromagnet reference layer. We show that the Ta vertical bar CoFeB interface makes a key contribution to the perpendicular anisotropy. The quasistatic phase diagram for switching under applied field and voltage is reported. Low switching voltages, V-c (50) (ns)=290 mV are obtained, in the range required for spin torque magnetic random access memory. Switching down to 1 ns is reported, with a rise in switching speed from increased overdrive that is eight times greater than for comparable in-plane devices, consistent with expectations from a single-domain model. (C) 2011 American Institute of Physics. [doi:10.1063/1.3536482]